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IDP30E60 IDB30E60 Fast Switching EmCon Diode Feature * 600 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * 175C operating temperature * Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 30 1.5 175 P-TO220-2-2. V A V C Type IDP30E60 IDB30E60 Package P-TO220-2-2. Ordering Code Q67040-S4488 Marking D30E60 D30E60 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4376 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25C TC=90C Symbol VRRM IF Value 600 52.3 34.9 Unit V A Surge non repetitive forward current TC=25C, tp=10 ms, sine halfwave I FSM I FRM Ptot 117 81 W 142.9 80.9 Maximum repetitive forward current TC=25C, tp limited by Tjmax, D=0.5 Power dissipation TC=25C TC=90C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+175 255 C C Rev.2 Page 1 2003-07-31 IDP30E60 IDB30E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 1.05 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25C V R=600V, Tj=150C Symbol min. IR VF - Values typ. max. Unit A 1.5 1.5 50 2500 V 2 - Forward voltage drop IF=30A, T j=25C IF=30A, T j=150C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDP30E60 IDB30E60 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF=30A, diF/dt=1000A/s, Tj=25C V R=400V, IF=30A, diF/dt=1000A/s, Tj=125C V R=400V, IF=30A, diF/dt=1000A/s, Tj=150C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 126 171 178 19 22 24 1100 1950 2150 4 4.6 4.8 A nC - Peak reverse current V R=400V, IF = 30A, diF/dt=1000A/s, Tj =25C V R=400V, IF =30A, diF/dt=1000A/s, T j=125C V R=400V, IF =30A, diF/dt=1000A/s, T j=150C Reverse recovery charge V R=400V, IF=30A, diF/dt=1000A/s, Tj=25C V R=400V, IF =30A, diF/dt=1000A/s, T j=125C V R=400V, IF =30A, diF/dt=1000A/s, T j=150C Reverse recovery softness factor V R=400V, IF=30A, diF/dt=1000A/s, Tj=25C V R=400V, IF=30A, diF/dt=1000A/s, Tj=125C V R=400V, IF=30A, diF/dt=1000A/s, Tj=150C Rev.2 Page 3 2003-07-31 IDP30E60 IDB30E60 1 Power dissipation Ptot = f (TC) parameter: Tj 175 C W 150 2 Diode forward current IF = f(TC) parameter: Tj 175C 55 A 45 40 120 110 P tot 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 IF 175 35 30 25 20 15 10 5 C TC 0 25 50 75 100 125 C TC 175 3 Typ. diode forward current IF = f (VF) 90 4 Typ. diode forward voltage VF = f (Tj) 2 A 70 60 V 1.8 1.7 60A VF IF -55C 25C 100C 150C 1.6 1.5 30A 50 40 1.4 30 20 10 0 0 1.3 1.2 1.1 1 -60 15A 0.5 1 1.5 V VF 2.5 -20 20 60 100 160 C Tj Rev.2 Page 4 2003-07-31 IDP30E60 IDB30E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125C 500 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 C 2600 ns nC 60A 400 2200 350 60A 30A 15A Q rr 2000 trr 300 1800 30A 250 1600 200 1400 15A 150 1200 100 200 300 400 500 600 700 800 A/s 1000 di F/dt 1000 200 300 400 500 600 700 800 A/s 1000 diF/dt 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125C 26 8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125C 12 A 22 20 10 Irr 18 16 S 60A 30A 15A 9 8 7 60A 30A 15A 14 12 10 8 6 200 6 5 4 3 200 300 400 500 600 700 800 A/s 1000 di F/dt 300 400 500 600 700 800 A/s 1000 diF/dt Rev.2 Page 5 2003-07-31 IDP30E60 IDB30E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E60 K/W 10 0 ZthJC 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2 Page 6 2003-07-31 IDP30E60 IDB30E60 TO-220-2-2 A P symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 N dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236 D U H B V E F W J G F G H J K L M N P T U V W 1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40 0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157 X L C M T K X Rev.2 Page 7 2003-07-31 IDP30E60 IDB30E60 TO-220-3-45 (P-TO220SMD) dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701 2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ. 0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ. Rev.2 Page 8 2003-07-31 IDP30E60 IDB30E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2 Page 9 2003-07-31 |
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